vishay siliconix SUP50N03-5M1P document number: 66570 s10-1050-rev. a, 03-may-10 www.vishay.com 1 n-channel 30 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g and uis tested ? compliant to rohs directive 2002/95/ec applications ? power supply - secondary synchronous rectification ? dc/dc converter product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) 30 0.0051 at v gs = 10 v 50 d 21.7 0.0063 at v gs = 4.5 v 50 d t o-220ab top view gd s ordering information: SUP50N03-5M1P-ge3 (lead (pb)-free and halogen-free) n-channel mosfet g d s notes: a. duty cycle 1 %. b. see soa curve for voltage derating. c. when mounted on 1" square pcb (fr-4 material). d. package limited. absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 50 d a t c = 70 c 50 d pulsed drain current i dm 100 avalanche current i as 40 single avalanche energy a l = 0.1 mh e as 80 mj maximum power dissipation a t c = 25 c p d 59.5 b w t a = 25 c c 2.7 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mount) c r thja 46 c/w junction-to-case (drain) r thjc 2.1
www.vishay.com 2 document number: 66570 s10-1050-rev. a, 03-may-10 vishay siliconix SUP50N03-5M1P notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v ds = 0 v, i d = 250 a 30 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 2.5 gate-body leakage i gss v ds = 0 v, v gs = 20 v 250 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 125 c 50 v ds = 30 v, v gs = 0 v, t j = 150 c 250 on-state drain current a i d(on) v ds 10 v, v gs = 10 v 50 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 22 a 0.0042 0.0051 v gs = 4.5 v, i d = 20 a 0.0052 0.0063 forward transconductance a g fs v ds = 15 v, i d = 20 a 110 s dynamic b input capacitance c iss v gs = 0 v, v ds = 15 v, f = 1 mhz 2780 pf output capacitance c oss 641 reverse transfer capacitance c rss 260 total gate charge c q g v ds = 15 v, v gs = 10 v, i d = 20 a 44 66 nc v ds = 15 v, v gs = 4.5 v, i d = 20 a 21.7 32.6 gate-source charge c q gs 7 gate-drain charge c q gd 6.7 gate resistance r g f = 1 mhz 0.4 2 4 tu r n - o n d e l ay t i m e c t d(on) v dd = 15 v, r l = 1.5 i d ? 10 a, v gen = 10 v, r g = 1 816 ns rise time c t r 918 turn-off delay time c t d(off) 35 53 fall time c t f 918 drain-source body diode ratings and characteristics t c = 25 c b continuous current i s 50 a pulsed current i sm 100 forward voltage a v sd i f = 10 a, v gs = 0 v 0.75 1.5 v reverse recovery time t rr i f = 10 a, di/dt = 100 a/s 34 51 ns peak reverse recovery current i rm(rec) 23a reverse recovery charge q rr 34 51 nc
vishay siliconix SUP50N03-5M1P document number: 66570 s10-1050-rev. a, 03-may-10 www.vishay.com 3 typical characteristics 25 c, unless otherwise noted drain to source voltage vs. i d transfer characteristics transconductance 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 v ds - drain-to-source voltage (v) - drain current (a) i d v gs =3 v v gs = 10 v thru 4 v 0 1 2 3 4 5 0.0 0.6 1.2 1.8 2.4 3.0 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-source voltage (v) - drain current (a) i d 0 45 90 135 180 0 6 12 18 24 30 i d - drain current (a) - transconductance (s) g fs t c = 125 c t c = - 55 c t c = 25 c on-resistance vs. drain current on-resistance vs. gate-to-source voltage gate charge 0.003 0.004 0.005 0.006 0.007 0 20 40 60 80 100 v gs =10v v gs =4.5v - on-resistance ( ) r ds(on) i d - drain current (a) 0.000 0.003 0.006 0.009 0.012 0.015 246810 t j = 25 c t j = 150 c - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) 0 2 4 6 8 10 0 1020304050 i d =20a v ds =15v v ds =8v v ds =24v - gate-to-source voltage (v) q g - total gate charge (nc) v gs
www.vishay.com 4 document number: 66570 s10-1050-rev. a, 03-may-10 vishay siliconix SUP50N03-5M1P typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage capacitance on-resistance vs. junction temperature 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 t j = 25 c t j = 150 c v sd - source-to-drain voltage (v) - source current (a) i s 0 750 1500 2250 3000 3750 0 5 10 15 20 25 30 c iss c oss c rss v ds - drain-to-source voltage (v) c - capacitance (pf) 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 i d =20a v gs =4.5v v gs =10v t j - junction temperature (c) (normalized) - on-resistance r ds(on) threshold voltage drain source breakdown vs. junction temperature current derating 0.5 0.9 1.3 1.7 2.1 - 50 - 25 0 25 50 75 100 125 150 175 i d = 250 a (v) v gs(th) t j - temperature (c) 33 35 37 39 41 43 - 50 - 25 0 25 50 75 100 125 150 175 i d = 250 a v ds - drain-to-source voltage (v) t j - temperature (c) 0 20 40 60 80 100 0 255075100125150 package limited t c - case temperature (c) i d - drain current (a)
vishay siliconix SUP50N03-5M1P document number: 66570 s10-1050-rev. a, 03-may-10 www.vishay.com 5 typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66570 . single pulse avalanche current capability vs. time time (s) (a) i da v 100 10 1 10 -3 10 -2 10 -1 10 -4 10 -6 t j 10 -5 t j = 25 c = 150 c safe operating area 0.01 0.1 1 10 100 1000 0.1 1 10 100 t c = 25 c single pulse bvdss limited limited by r ds(on) * 100 a 1ms v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specied - drain current (a) i d 10 ms 1 s, 10 s, dc 100 ms normalized thermal transient impedance, junction-to-case 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1 0.1 0.05 single pulse 0.02
document number: 71195 www.vishay.com revison: 01-nov-10 1 package information vishay siliconix to-220ab note * m = 1.32 mm to 1.62 mm (dimension including protrusion) heatsink hole for hvm * m 3 2 1 l l(1) d h(1) q ? p a f j(1) b (1) e(1) e e b c millimeters inches dim. min. max. min. max. a 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 d 14.85 15.49 0.585 0.610 e 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 f 1.14 1.40 0.045 0.055 h(1) 6.09 6.48 0.240 0.255 j(1) 2.41 2.92 0.095 0.115 l 13.35 14.02 0.526 0.552 l(1) 3.32 3.82 0.131 0.150 ? p 3.54 3.94 0.139 0.155 q 2.60 3.00 0.102 0.118 ecn: x10-0416-rev. m, 01-nov-10 dwg: 5471
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